Monolayer molybdenum disulfide top-gate field-effect transistors with a transconductance of 0.45 mS µm⁻¹ at an equivalent oxide thickness of around 1 nm can be created with the help of an epitaxially derived aluminium oxide interfacial layer.

Quantum dot pixel arrays can be transfer printed over areas up to 4 inches, and with pixel sizes down to 600 nm, using a cracking step to fracture the cohesive bonds between dots before pick-up and transfer.

Wafer-scale and air-stable semiconducting films of two-dimensional copper indium selenide can be made from monolayer ink deposition and annealing, creating transistors with an average mobility of 155 cm² V⁻¹ s⁻¹ and a microprocessor containing over 100 devices.

A low-power self-powered integrated system for sensing and computing can be created through the monolithic integration of tiers containing graphene-based chemical sensors, two-dimensional semiconductor-based complementary logic and silicon photovoltaic modules.

An array of 256 ring-electrode pairs fabricated on a complementary metal–oxide–semiconductor integrated circuit that can control local acidity and induce parallel enzymatic DNA synthesis can be used to encode a 169-byte text using DNA as a data storage medium.

The state of a foundry-fabricated spin qubit unit cell, which is composed of two electron spins with a controllable exchange interaction, can be read out in a single shot using gate reflectometry.

Artificial intelligence (AI) agents can be used to calculate the carbon footprint of electronic devices, potentially helping to address the increasing environmental impact of electronics and AI.